Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots
Crossref DOI link: https://doi.org/10.1007/s11664-015-3872-8
Published Online: 2015-06-26
Published Print: 2015-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ma, Zehao
Ooi, Poh Choon
Li, Fushan
Yun, Dong Yeol
Kim, Tae Whan
Funding for this research was provided by:
Ministry of Education, Science and Technology (2013-016467)
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