Characterization of Cross-Sectioned Gallium Nitride High-Electron-Mobility Transistors with In Situ Biasing
Crossref DOI link: https://doi.org/10.1007/s11664-015-3908-0
Published Online: 2015-07-10
Published Print: 2015-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hilton, A.M. http://orcid.org/0000-0001-8828-1609
Brown, J.L.
Moore, E.A.
Hoelscher, J.A.
Heller, E.R.
Dorsey, D.L.
Text and Data Mining valid from 2015-07-10