Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications
Crossref DOI link: https://doi.org/10.1007/s11664-016-4534-1
Published Online: 2016-04-27
Published Print: 2016-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hsieh, Ting-En
Lin, Yueh-Chin
Chu, Chung-Ming
Chuang, Yu-Lin
Huang, Yu-Xiang
Shi, Wang-Cheng
Dee, Chang-Fu
Majlis, Burhanuddin Yeop
Lee, Wei-I
Chang, Edward Yi
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