Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices
Crossref DOI link: https://doi.org/10.1007/s11664-016-4617-z
Published Online: 2016-07-26
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hossain, K.
Höglund, L.
Phinney, L. C.
Golding, T. D.
Wicks, G.
Khoshakhlagh, A.
Ting, D. Z.-Y.
Soibel, A.
Gunapala, S. D.
License valid from 2016-07-26