Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates
Crossref DOI link: https://doi.org/10.1007/s11664-016-5029-9
Published Online: 2016-10-21
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Su, Jie
Posthuma, Niels
Wellekens, Dirk
Saripalli, Yoga N.
Decoutere, Stefaan
Arif, Ronald
Papasouliotis, George D.
License valid from 2016-10-21