Analysis of I–V–T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature
Crossref DOI link: https://doi.org/10.1007/s11664-019-07129-2
Published Online: 2019-03-20
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Fritah, A.
Dehimi, L.
Pezzimenti, F. http://orcid.org/0000-0002-8410-0142
Saadoune, A.
Abay, B.
Text and Data Mining valid from 2019-03-20
Article History
Received: 24 September 2018
Accepted: 8 March 2019
First Online: 20 March 2019