Comparative Analysis of the Effects of Trap Charges on Single- and Double-Gate Extended-Source Tunnel FET with δp+ SiGe Pocket Layer
Crossref DOI link: https://doi.org/10.1007/s11664-020-08151-5
Published Online: 2020-05-07
Published Print: 2020-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Talukdar, Jagritee
Rawat, Gopal
Singh, Kunal
Mummaneni, Kavicharan
Text and Data Mining valid from 2020-05-07
Version of Record valid from 2020-05-07
Article History
Received: 4 December 2019
Accepted: 9 April 2020
First Online: 7 May 2020