Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET)
Crossref DOI link: https://doi.org/10.1007/s11664-024-10997-y
Published Online: 2024-03-26
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Omendra Kr http://orcid.org/0000-0002-6686-7091
Dhandapani, Vaithiyanathan
Kaur, Baljit
Text and Data Mining valid from 2024-03-26
Version of Record valid from 2024-03-26
Article History
Received: 27 June 2023
Accepted: 20 February 2024
First Online: 26 March 2024
Conflict of interest
: The authors declare that they have no conflict of interest.
: Yes.