Structure and photoluminescence properties of InN films grown on porous silicon by MOCVD
Crossref DOI link: https://doi.org/10.1007/s11801-017-7013-x
Published Online: 2017-05-24
Published Print: 2017-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Jun
Zhang, Hong-yan
License valid from 2017-05-01