Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications
Crossref DOI link: https://doi.org/10.1007/s12034-015-0881-4
Published Online: 2015-06-17
Published Print: 2015-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
PERI, BHAVANA
BORAH, BIKASH
DASH, RAJ KISHORA
Text and Data Mining valid from 2015-06-17