Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode
Crossref DOI link: https://doi.org/10.1007/s12034-016-1285-9
Published Online: 2016-09-24
Published Print: 2016-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
PALLA, PENCHALAIAH
UPPU, GOPI RAJA
ETHIRAJ, ANITA S
RAINA, J P
License valid from 2016-09-24