TCAD simulation study on reliability issue of heterojunction heterodielectric FinFET: Effect of interface trap charge, BOX height and temperature
Crossref DOI link: https://doi.org/10.1007/s12043-021-02210-0
Published Online: 2021-10-09
Published Print: 2021-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hirpara, Yash
Saha, Rajesh
Text and Data Mining valid from 2021-10-09
Version of Record valid from 2021-10-09
Article History
Received: 10 January 2021
Revised: 20 April 2021
Accepted: 21 June 2021
First Online: 9 October 2021