Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
Crossref DOI link: https://doi.org/10.1007/s12274-014-0430-2
Published Online: 2014-04-23
Published Print: 2014-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hu, Pingan
Zhang, Jia
Yoon, Mina
Qiao, Xiao-Fen
Zhang, Xin
Feng, Wei
Tan, Pingheng
Zheng, Wei
Liu, Jingjing
Wang, Xiaona
Idrobo, Juan C.
Geohegan, David B.
Xiao, Kai
Text and Data Mining valid from 2014-04-23