Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage
Crossref DOI link: https://doi.org/10.1007/s12274-019-2558-6
Published Online: 2019-11-16
Published Print: 2020-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, Lijun
Zhao, Chenyi
Ding, Li
Peng, Lianmao
Zhang, Zhiyong
Text and Data Mining valid from 2019-11-16
Version of Record valid from 2019-11-16
Article History
Received: 18 September 2019
Revised: 16 October 2019
Accepted: 31 October 2019
First Online: 16 November 2019