The effect of the dopant’s reactivity for high-performance 2D MoS2 thin-film transistor
Crossref DOI link: https://doi.org/10.1007/s12274-020-3068-2
Published Online: 2020-09-21
Published Print: 2021-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Hanleem
Bak, Sora
Kim, Joosung
Lee, Hyoyoung
Text and Data Mining valid from 2020-09-21
Version of Record valid from 2020-09-21
Article History
Received: 10 July 2020
Revised: 21 August 2020
Accepted: 23 August 2020
First Online: 21 September 2020