High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation
Crossref DOI link: https://doi.org/10.1007/s12274-022-4263-0
Published Online: 2022-04-30
Published Print: 2022-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Yoonsok
Kim, Taeyoung
Kim, Eun Kyu
Text and Data Mining valid from 2022-04-30
Version of Record valid from 2022-04-30
Article History
Received: 19 December 2021
Revised: 4 February 2022
Accepted: 21 February 2022
First Online: 30 April 2022