The Effect of a Porous Layer on I-V Characterization of a Polysilicon p-n Junction
Crossref DOI link: https://doi.org/10.1007/s12633-016-9417-9
Published Online: 2016-05-07
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shiraz, Hamid Ghorbani
Astaraei, Fatemeh Razi
Tavakoli, Omid
Mousavi, Seyed Hamed
Rahimi, Fereshteh
Funding for this research was provided by:
University of Tehran (IR)
Text and Data Mining valid from 2016-05-07