Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length
Crossref DOI link: https://doi.org/10.1007/s12633-016-9528-3
Published Online: 2017-04-13
Published Print: 2017-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Boukortt, N.
Hadri, B.
Patanè, S.
Caddemi, A.
Crupi, G.
License valid from 2017-04-13