Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device
Crossref DOI link: https://doi.org/10.1007/s12633-016-9534-5
Published Online: 2017-04-21
Published Print: 2018-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumar, Prashanth
WasimArif,
Bhowmick, Brinda
License valid from 2017-04-21