Optimization of Electrical Parameters of Pocket Doped SOI TFET with L Shaped Gate
Crossref DOI link: https://doi.org/10.1007/s12633-019-00169-7
Published Online: 2019-05-15
Published Print: 2020-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goswami, Partha Pratim http://orcid.org/0000-0002-0006-3162
Bhowmick, Brinda
Text and Data Mining valid from 2019-05-15
Version of Record valid from 2019-05-15
Article History
Received: 30 January 2019
Accepted: 25 April 2019
First Online: 15 May 2019