3-D Simulation of Novel High Performance of Nano-Scale Dual Gate Fin-FET Inserting the High-K Dielectric TiO2 at 5 Nm Technology
Crossref DOI link: https://doi.org/10.1007/s12633-019-00220-7
Published Online: 2019-12-14
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bourahla, N.
Hadri, B.
Bourahla, A.
Text and Data Mining valid from 2019-12-14
Version of Record valid from 2019-12-14
Article History
Received: 2 March 2019
Accepted: 1 July 2019
First Online: 14 December 2019