Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications
Crossref DOI link: https://doi.org/10.1007/s12633-019-00316-0
Published Online: 2019-11-26
Published Print: 2020-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mondal, Arnab
Roy, Akash
Mitra, Rajrup
Kundu, Atanu
Text and Data Mining valid from 2019-11-26
Version of Record valid from 2019-11-26
Article History
Received: 10 July 2019
Accepted: 29 October 2019
First Online: 26 November 2019