Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs)
Crossref DOI link: https://doi.org/10.1007/s12633-020-00400-w
Published Online: 2020-02-20
Published Print: 2021-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Srinivas, P. S. T. N.
Kumar, Arun
Tiwari, Pramod Kumar
Text and Data Mining valid from 2020-02-20
Version of Record valid from 2020-02-20
Article History
Received: 10 September 2019
Accepted: 30 January 2020
First Online: 20 February 2020