Gaussian Doped Planar 4H-SiC Junctionless Field Effect Transistor For Enhanced Gate Controllability
Crossref DOI link: https://doi.org/10.1007/s12633-020-00534-x
Published Online: 2020-06-20
Published Print: 2021-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Agarwal, Shalini
Singh, Sangeeta
Sahana, Bikash Chandra
Naugarhiya, Alok
Text and Data Mining valid from 2020-06-20
Version of Record valid from 2020-06-20
Article History
Received: 30 January 2020
Accepted: 14 May 2020
First Online: 20 June 2020