Improvising the Switching Ratio through Low-k / High-k Spacer and Dielectric Gate Stack in 3D FinFET - a Simulation Perspective
Crossref DOI link: https://doi.org/10.1007/s12633-020-00618-8
Published Online: 2020-08-03
Published Print: 2021-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Samal, Asharani
Pradhan, Kumar Prasannajit http://orcid.org/0000-0002-7313-294X
Mohapatra, Sushanta Kumar
Text and Data Mining valid from 2020-08-03
Version of Record valid from 2020-08-03
Article History
Received: 9 April 2020
Accepted: 21 July 2020
First Online: 3 August 2020