Gate Oxide Variability Analysis of a Novel 3 nm Truncated Fin–FinFET for High Circuitry Performance
Crossref DOI link: https://doi.org/10.1007/s12633-020-00734-5
Published Online: 2020-10-06
Published Print: 2021-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kashyap, Mridul Prakash
Chaujar, Rishu http://orcid.org/0000-0002-0161-8449
Text and Data Mining valid from 2020-10-06
Version of Record valid from 2020-10-06
Article History
Received: 17 June 2020
Accepted: 23 September 2020
First Online: 6 October 2020