Drain Current Modelling of Asymmetric Junctionless Dual Material Double Gate MOSFET with High K Gate Stack for Analog and RF Performance
Crossref DOI link: https://doi.org/10.1007/s12633-020-00783-w
Published Online: 2020-11-10
Published Print: 2022-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Basak, Arighna
Sarkar, Angsuman
Text and Data Mining valid from 2020-11-10
Version of Record valid from 2020-11-10
Article History
Received: 31 July 2020
Accepted: 14 October 2020
First Online: 10 November 2020