Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity
Crossref DOI link: https://doi.org/10.1007/s12633-021-00973-0
Published Online: 2021-02-04
Published Print: 2022-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dash, Sidhartha
Mohanty, Saumendra Kumar
Mishra, Guru Prasad http://orcid.org/0000-0003-0326-7619
Text and Data Mining valid from 2021-02-04
Version of Record valid from 2021-02-04
Article History
Received: 17 November 2020
Revised: 13 January 2021
Accepted: 15 January 2021
First Online: 4 February 2021
Declarations
:
: Not applicable.
: The authors declare that they have no conflict of interests.