Recalculation of Intrinsic Carrier Concentration in Silicon at T = 300 K in Presence of Degenerate Doping
Crossref DOI link: https://doi.org/10.1007/s12633-023-02674-2
Published Online: 2023-09-26
Published Print: 2024-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ashraf, Nabil Shovon
Text and Data Mining valid from 2023-09-26
Version of Record valid from 2023-09-26
Article History
Received: 27 June 2023
Accepted: 8 September 2023
First Online: 26 September 2023
Declarations
:
: Yes.
: The authors declare no competing interests.