Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures
Crossref DOI link: https://doi.org/10.1007/s12648-015-0722-8
Published Online: 2015-06-23
Published Print: 2016-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tuğluoğlu, N.
Koralay, H.
Akgül, K. B.
Çavdar, Ş.
Text and Data Mining valid from 2015-06-23