2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs
Crossref DOI link: https://doi.org/10.1007/s12648-017-1019-x
Published Online: 2017-05-13
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Goel, Ekta
Singh, Kunal
Singh, Balraj
Kumar, Sanjay
Jit, Satyabrata http://orcid.org/0000-0001-6772-8117
License valid from 2017-05-13