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3D analytical modeling and electrical characteristics analysis of gate-engineered SiO2/HfO2-stacked tri-gate TFET

Crossref DOI link: https://doi.org/10.1007/s12648-019-01446-2

Published Online: 2019-04-05

Published Print: 2020-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Dash, Dinesh Kumar

Saha, Priyanka

Mahajan, Aman

Kumari, Tripty

Sarkar, Subir Kumar
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Text and Data Mining valid from 2019-04-05
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Article History

Received: 1 August 2018

Accepted: 11 January 2019

First Online: 5 April 2019