Analytical drain current model of stacked oxide SiO2/HfO2 cylindrical gate tunnel FETs with oxide interface charge
Crossref DOI link: https://doi.org/10.1007/s12648-019-01535-2
Published Online: 2019-06-25
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, P K
Baral, K
Kumar, S
Chander, S
Jit, S http://orcid.org/0000-0001-6772-8117
Text and Data Mining valid from 2019-06-25
Version of Record valid from 2019-06-25
Article History
Received: 15 February 2019
Accepted: 23 April 2019
First Online: 25 June 2019