Robustness to ambipolarity and improvement to HF FOMs of dual-stacked-gate dielectrics underlap heterojunction TFETs
Crossref DOI link: https://doi.org/10.1007/s12648-020-01821-4
Published Online: 2020-08-05
Published Print: 2021-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Das, Rajashree
Bhowmick, Brinda
Baishya, Srimanta
Text and Data Mining valid from 2020-08-05
Version of Record valid from 2020-08-05
Article History
Received: 18 August 2019
Accepted: 24 February 2020
First Online: 5 August 2020