Characteristics of heat-annealed silicon homojunction infrared photodetector fabricated by plasma-assisted technique
Crossref DOI link: https://doi.org/10.1007/s13320-016-0338-4
Published Online: 2016-10-13
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hammadi, Oday A.
Text and Data Mining valid from 2016-10-13
Article History
Received: 2 May 2016
Revised: 27 August 2016
First Online: 13 October 2016