Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
Crossref DOI link: https://doi.org/10.1007/s13391-017-1606-1
Published Online: 2017-07-10
Published Print: 2017-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Seongjun
Ahn, Kwang-Soon
Ryou, Jae-Hyun
Kim, Hyunsoo
License valid from 2017-07-01