Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC
Crossref DOI link: https://doi.org/10.1007/s13391-017-1721-z
Published Online: 2017-07-10
Published Print: 2017-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kyoung, Sinsu
Jung, Eun-Sik
Sung, Man Young
License valid from 2017-07-01