Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate
Crossref DOI link: https://doi.org/10.1007/s13391-017-6124-7
Published Online: 2016-12-22
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zhu, Youhua
Wang, Meiyu
Li, Yi
Tan, Shuxin
Deng, Honghai
Guo, Xinglong
Yin, Haihong
Egawa, Takashi
License valid from 2016-12-22