Effect of gate-dielectrics on the electrical characteristics of solution-processed single-wall-carbon-nanotube thin-film transistors
Crossref DOI link: https://doi.org/10.1007/s13391-017-7005-9
Published Online: 2017-02-16
Published Print: 2017-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ha, Tae-Jun
License valid from 2017-02-16