Structural characteristics and defect states of intrinsic GaN epi-layers in a high power device structure
Crossref DOI link: https://doi.org/10.1007/s40042-021-00214-y
Published Online: 2021-06-18
Published Print: 2021-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bong, Chung-Jong
Ahn, Chang Wan
Bae, Sung-Bum
Kim, Eun Kyu http://orcid.org/0000-0003-3373-963X
Text and Data Mining valid from 2021-06-18
Version of Record valid from 2021-06-18
Article History
Received: 4 May 2021
Revised: 21 May 2021
Accepted: 21 May 2021
First Online: 18 June 2021