Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor
Crossref DOI link: https://doi.org/10.1007/s40042-021-00299-5
Published Online: 2021-09-28
Published Print: 2021-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Yu-Shyan
Huang, Jian-Jhang
Text and Data Mining valid from 2021-09-28
Version of Record valid from 2021-09-28
Article History
Received: 22 March 2021
Revised: 13 July 2021
Accepted: 23 July 2021
First Online: 28 September 2021