Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3
Crossref DOI link: https://doi.org/10.1007/s40042-021-00340-7
Published Online: 2021-11-30
Published Print: 2021-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Park, Joo-Hyeong
Park, Jea-Gun
Text and Data Mining valid from 2021-11-30
Version of Record valid from 2021-11-30
Article History
Received: 3 November 2021
Revised: 5 November 2021
Accepted: 8 November 2021
First Online: 30 November 2021