Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors
Crossref DOI link: https://doi.org/10.1007/s40042-021-00354-1
Published Online: 2021-12-15
Published Print: 2022-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Baek-Ju
Seo, Dong-Won
Choi, Jae-Wook
Text and Data Mining valid from 2021-12-15
Version of Record valid from 2021-12-15
Article History
Received: 5 October 2021
Revised: 21 October 2021
Accepted: 1 November 2021
First Online: 15 December 2021