Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM
Crossref DOI link: https://doi.org/10.1007/s40089-017-0217-z
Published Online: 2017-08-22
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dongale, T. D.
Khot, K. V.
Mohite, S. V.
Desai, N. D.
Shinde, S. S.
Patil, V. L.
Vanalkar, S. A.
Moholkar, A. V.
Rajpure, K. Y.
Bhosale, P. N.
Patil, P. S.
Gaikwad, P. K.
Kamat, R. K.
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