Pressure-sensitive transistor fabricated from an organic semiconductor 1,1′-dibutyl-4,4′-bipyridinium diiodide
Crossref DOI link: https://doi.org/10.1007/s40242-018-7297-9
Published Online: 2018-01-02
Published Print: 2018-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Fu, Xianwei
Liu, Yang
Liu, Zhi
Dong, Ning
Zhao, Tianyu
Zhao, Dan
Lian, Gang
Wang, Qilong
Cui, Deliang
License valid from 2018-01-02