Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure
Crossref DOI link: https://doi.org/10.1007/s40820-015-0055-3
Published Online: 2015-08-01
Published Print: 2015-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jana, Debanjan
Samanta, Subhranu
Roy, Sourav
Lin, Yu Feng
Maikap, Siddheswar
License valid from 2015-08-01