Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity
Crossref DOI link: https://doi.org/10.1007/s40843-020-1444-1
Published Online: 2020-09-25
Published Print: 2021-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yu, Tianqi
He, Fuchao
Zhao, Jianhui
Zhou, Zhenyu
Chang, Jingjing
Chen, Jingsheng
Yan, Xiaobing
Text and Data Mining valid from 2020-09-25
Version of Record valid from 2020-09-25
Article History
Received: 13 March 2020
Accepted: 29 June 2020
First Online: 25 September 2020