PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation
Crossref DOI link: https://doi.org/10.1007/s41365-017-0263-2
Published Online: 2017-06-29
Published Print: 2017-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Cheng, Guo-Dong
Chen, Ye
Yan, Long
Shen, Rong-Fang
License valid from 2017-06-29