Solution-processed Pb0.8Ba0.2ZrO3 as a gate dielectric for low-voltage metal-oxide thin-film transistor
Crossref DOI link: https://doi.org/10.1007/s42247-019-00065-1
Published Online: 2020-01-10
Published Print: 2020-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Acharya, Vishwas
Sharma, Anand
Chourasia, Nitesh K.
Pal, Bhola N. http://orcid.org/0000-0001-7512-3441
Text and Data Mining valid from 2020-01-10
Version of Record valid from 2020-01-10
Article History
Received: 22 June 2019
Accepted: 26 December 2019
First Online: 10 January 2020