Strained Si on Insulator as Potential Material for Forced Stacked Multi-threshold FinFET Based Inverter Considering Ultra Low-Power Applications
Crossref DOI link: https://doi.org/10.1007/s42341-019-00118-6
Published Online: 2019-07-04
Published Print: 2019-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Sangeeta
Dubey, Shashank
Kharwar, Saurabh
Kondekar, P. N.
Text and Data Mining valid from 2019-07-04
Version of Record valid from 2019-07-04
Article History
Received: 3 January 2019
Revised: 10 June 2019
Accepted: 29 June 2019
First Online: 4 July 2019